| PART |
Description |
Maker |
| AL440B AL440B-12 AL440B-24 |
4M-bits FIFO field memory
4Mbits (512k x 8-bit) FIFO memory
4MBits FIFO Field Memory
|
ETC[ETC]
N.A.
AVERLOGIC
|
| AL440B-12 AL440B-24 AL440B |
4M-Bit High Speed FIFO Field Memory
|
AverLogic Technologies Inc
|
| AM7204A AM7204A-25RC AM7204A-15RC AM7204A-35RC AM7 |
HIGH DENSITY FIRST-IN FIRST-OUT(FIFO) 4096 x 9-BIT CMOS MEMORY 4K X 9 OTHER FIFO, 50 ns, PQCC32
|
Advanced Micro Devices, Inc.
|
| TC58FVM7B2AFT80 |
128MBIT (16Mx8 BITS/8Mx16 BITS) CMOS FLASH MEMORY
|
TOSHIBA
|
| TC58FVM5B3AXB65 TC58FVM5B3AFT65 TC58FVM5T3AXB65 TC |
东芝马鞍山数字集成电路硅栅CMOS
32MBIT (4M 8 BITS/2M 16 BITS) CMOS FLASH MEMORY
|
TOSHIBA
|
| TC58FVT641XB-70 TC58FVB641XB-70 TC58FVB641FT-70 TC |
CAT5E PATCH CORD 15 FOOT BLACK
64-MBIT (8Mx8 BITS/4Mx16 BITS) CMOS FLASH MEMORY
|
Toshiba Corporation
|
| K9F4G08U1M |
512M x 8 Bits / 1G x 8 Bits NAND Flash Memory
|
Samsung semiconductor
|
| K9F4G08U0M K9K8G08U1M |
512M x 8 Bits / 1G x 8 Bits NAND Flash Memory
|
Samsung Electronic
Samsung semiconductor
|
| TMM2063AP-10 TMM2063AP-12 TMM2063AP-70 |
70ns ; 80mA; V(cc): -0.5 to 7.0V; 0.8W; 65,536 bits high speed and low power static access memory
120ns ; 80mA; V(cc): -0.5 to 7.0V; 0.8W; 65,536 bits high speed and low power static access memory
100ns ; 80mA; V(cc): -0.5 to 7.0V; 0.8W; 65,536 bits high speed and low power static access memory
65536 BITS HIGH SPEED AND LOW POWER STATIC RAMDOM ACCESS MEMORY
|
Toshiba Semiconductor
|
| M66257FP M66257E M66257 |
5120 x 8-BIT x 2 LINE MEMORY (FIFO)
From old datasheet system
5120 8-BIT 2 LINE MEMORY (FIFO)
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| 7202LA20JG IDT7200L 7201LA20DB 7201LA35J 7201LA20T |
CMOS ASYNCHRONOUS FIFO
CMOS ASYNCHRONOUS FIFO 256 x 9, 512 x 9 and 1,024 x 9
First-In/First-Out dual-port memory
|
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